ISL15100 Datasheet, PDF (4/9 Pages) Intersil Corporation – Single differential driver

ISL15100
Absolute Maximum Ratings (T_A = +25°C)
V_S+ Voltage to V_S- or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +13.3V
INA+, INB+ Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V_S+
C₀, C₁ Voltage to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V_S+
Current into any Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA
Continuous Output Current for Long Term Reliability. . . . . . . . . . . . . . . . 50mA
Latch-up (Tested per JESD78D, Class II) . . . . . . . . . . . . . . . . . . . . . . 100mA
ESD Rating
Human Body Model (Tested per JESD22-A114F). . . . . . . . . . . . . . . . . . 4kV
Charge Device Model (Tested per JESD22-C101E). . . . . . . . . . . . . 1.5kV
Machine Model (Tested per JESD22-A115C) . . . . . . . . . . . . . . . . . 300V
Thermal Information
Thermal Resistance (Typical)
θ_JA (°C/W) θ_JC (°C/W)
16 Ld QFN Package (Notes 4, 5) . . . . . . . .
53
16.5
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . +150°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . -40°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . - 40°C to +150°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. θ_JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For θ_JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications V_S+ = +12V, V_S- = GND = 0V, see Figure 3, Full Bias (C₀ = C₁ = 0V), T_A = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
MAX
(Note 6) TYP (Note 6) UNIT
DYNAMIC PERFORMANCE
-3dB Bandwidth
Slew Rate
Total Harmonic Distortion
BW
Figure 3, 2V_P-P differential output at pins
SR
Differential V_OUT (V_OUTA - V_OUTB) from -5V
to +5V (10V_P-P)
THD, Low Frequency, 200kHz, differential 12V_P-P, across ≥350Ω
Light Load
differential load
180
1200
MHz
V/µs
-88
-67
dBc
THD, Low Frequency, 200kHz, differential 12V_P-P, across 29Ω
Heavy Load
differential load
-72
-68
dBc
THD, High Frequency, 4MHz, differential 12V_P-P, across ≥350Ω
Light Load
differential load
-64
-58
dBc
THD, High Frequency, 4MHz, differential 12V_P-P, across 29Ω
Heavy Load
differential load
-51
-48
dBc
Avg. Multi-Tone Power Ratio
MTPR
Off State Multi-Tone Power Ratio
MTPR-OFF
Non-inverting Input Spot Voltage Noise Eni
2MHz to 50MHz, 25kHz tone spacing,
P_LINE = 15.5dBm, CF = 15dB
2MHz to 50MHz, 25kHz tone spacing,
P_LINE = 15.5dBm, CF = 15dB
F > 1MHz, spot noise voltage on INA+ and
INB+ inputs separately
-43
dBc
-55
dBc
6
nV/√Hz
Non-inverting Input Spot Current Noise Ini+
F > 1MHz, spot noise current on INA+ and
INB+ inputs separately
13
pA/√Hz
Inverting Input Spot Current Noise
Ini-
F > 1MHz, spot noise current on INA- and
INB- inputs separately
50
pA/√Hz
DC AND INPUT CHARACTERISTICS
Non-Inverting Input Bias Current
I_B+
Non-inverting inputs, INA+ and INB+, at
-7
2
7
µA
mid-supply voltage (Note 7)
Non-Inverting Input Bias Current
Mismatch
I_B+DM
Difference between the INA+ and INB+
-0.5
0
0.5
µA
bias currents
Inverting Input Bias Current
I_B-
Inverting inputs, INA- and INB-, at mid
supply voltage (Note 7)
-90
-30
55
µA
4
FN8577.0
September 19, 2013