SI8640BA-B-IU Datasheet, PDF (23/42 Pages) Silicon Laboratories – Low-Power Quad-Channel Digital Isolators

Si864x Data Sheet
Electrical Specifications
Table 4.8. IEC 60747-5-5 Insulation Characteristics for Si86xxxx ¹
Parameter
Symbol
Test Condition
Characteristic
Unit
WB SOIC-16 NB SOIC-16 QSOP-16
Maximum Working Insulation
Voltage
V_IORM
1200
630
630
Vpeak
Method b1
Input to Output Test Voltage
(V_IORM x 1.875 = VPR, 100%
V_PR
Production Test, t_m = 1 sec,
2250
1182
1182
Vpeak
Partial Discharge < 5 pC)
Transient Overvoltage
V_IOTM
t = 60 sec
6000
6000
6000
Vpeak
Tested per IEC 60065 with surge
voltage of 1.2 µs/50 µs
Surge Voltage
V_IOSM Si864xxT tested with magnitude
Vpeak
6250 V x 1.6 = 10 kV
6250
—
—
Si864xxB/C/D tested with 4000 V
4000
4000
4000
Pollution Degree
(DIN VDE 0110, Table 1)
2
2
2
Insulation Resistance at T_S, V_IO
= 500 V
R_S
>10⁹
>10⁹
>10⁹
Ω
Note:
1. Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of 40/125/21.
Table 4.9. IEC Safety Limiting Values ¹
Parameter
Symbol
Test Condition
Max
Unit
WB SOIC-16 NB SOIC-16 QSOP-16
Case Temperature
T_S
150
150
150
°C
Safety Input, Output, or Supply
Current
θ_JA = 100 °C/W (WB SOIC-16)
I_S
105 °C/W (NB SOIC-16, QSOP-16)
220
V_I = 5.5 V, T_J = 150 °C, T_A = 25 °C
210
210
mA
Device Power Dissipation ²
P_D
275
275
275
mW
Note:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 4.4 (WB SOIC-16) Thermal Derat-
ing Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-5/VDE 0884-10, as Applies on
page 23 and Figure 4.5 (NB SOIC-16, QSOP-16) Thermal Derating Curve, Dependence of Safety Limiting Values with Case
Temperature per DIN EN 60747-5-5/VDE 0884-10, as Applies on page 23.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V; T_J = 150 ºC; C_L = 15 pF, input a 150 Mbps 50% duty cycle square wave.
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