EFM32WG332 Datasheet, PDF (19/76 Pages) Silicon Laboratories – Operation from backup battery when main power drains out

3.7 Flash
Table 3.7. Flash
...the world's most energy friendly microcontrollers
Symbol
Parameter
Condition
EC_FLASH
Flash erase cycles
before failure
RET_FLASH
t_{W_PROG}
T_AMB<150°C
Flash data retention T_AMB<85°C
T_AMB<70°C
Word (32-bit) pro-
gramming time
t_PERASE
Page erase time
t_DERASE
Device erase time
I_ERASE
Erase current
I_WRITE
Write current
V_FLASH
Supply voltage dur-
ing flash erase and
write
1_{Measured at 25°C}
3.8 General Purpose Input Output
Table 3.8. GPIO
Min
Typ
20000
Max
Unit
cycles
10000
10
20
20
h
years
years
µs
20
20.4
20.8 ms
40
40.8
41.6 ms
7¹ mA
7¹ mA
1.98
3.8 V
Symbol
V_IOIL
V_IOIH
V_IOOH
Parameter
Condition
Min
Typ
Max
Unit
Input low voltage
Input high voltage
Sourcing 0.1 mA, V_DD=1.98 V,
GPIO_Px_CTRL DRIVEMODE
= LOWEST
0.70V_DD
0.80V_DD
0.30V_DD V
V
V
Sourcing 0.1 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= LOWEST
0.90V_DD
V
Sourcing 1 mA, V_DD=1.98 V,
GPIO_Px_CTRL DRIVEMODE
0.85V_DD
V
= LOW
Output high volt-
age (Production test
condition = 3.0V,
DRIVEMODE =
Sourcing 1 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= LOW
0.90V_DD
V
STANDARD)
Sourcing 6 mA, V_DD=1.98 V,
0.75V_DD
V
GPIO_Px_CTRL DRIVEMODE
= STANDARD
Sourcing 6 mA, V_DD=3.0 V,
0.85V_DD
V
GPIO_Px_CTRL DRIVEMODE
= STANDARD
Sourcing 20 mA, V_DD=1.98 V,
0.60V_DD
V
GPIO_Px_CTRL DRIVEMODE
= HIGH
2014-06-13 - EFM32WG332FXX - d0191_Rev1.40
19
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