EFM32HG222 Datasheet, PDF (18/70 Pages) Silicon Laboratories – Output state retention and wake-up from Shutoff Mode

Preliminary
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Table 3.5. Power Management
Symbol
V_BODextthr-
V_BODextthr+
t_RESET
C_DECOUPLE
Parameter
Condition
Min
Typ
BOD threshold on
1.74
falling external sup-
ply voltage
BOD threshold on
rising external sup-
ply voltage
Delay from reset
is released until
program execution
starts
Applies to Power-on Reset,
Brown-out Reset and pin reset.
Voltage regulator
decoupling capaci-
tor.
X5R capacitor recommended.
Apply between DECOUPLE pin
and GROUND
Max
Unit
1.96 V
1.89
V
163
µs
1
µF
3.7 Flash
Table 3.6. Flash
Symbol
Parameter
Condition
EC_FLASH
Flash erase cycles
before failure
RET_FLASH
t_{W_PROG}
T_AMB<150°C
Flash data retention T_AMB<85°C
T_AMB<70°C
Word (32-bit) pro-
gramming time
t_{P_ERASE}
Page erase time
t_{D_ERASE}
Device erase time
I_ERASE
Erase current
I_WRITE
Write current
V_FLASH
Supply voltage dur-
ing flash erase and
write
1_{Measured at 25°C}
3.8 General Purpose Input Output
Min
Typ
20000
Max
Unit
cycles
10000
10
20
20
h
years
years
µs
20
20.4
20.8 ms
40
40.8
41.6 ms
7¹ mA
7¹ mA
1.98
3.8 V
Table 3.7. GPIO
Symbol
V_IOIL
V_IOIH
V_IOOH
Parameter
Condition
Min
Typ
Max
Unit
Input low voltage
0.30V_DD V
Input high voltage
0.70V_DD
V
Output high volt-
age (Production test
condition = 3.0V,
DRIVEMODE =
STANDARD)
Sourcing 0.1 mA, V_DD=1.98 V,
GPIO_Px_CTRL DRIVEMODE
= LOWEST
Sourcing 0.1 mA, V_DD=3.0 V,
GPIO_Px_CTRL DRIVEMODE
= LOWEST
0.80V_DD
V
0.90V_DD
V
2015-05-06 - EFM32HG222FXX - _Rev0.91
18
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