EFM32WG995 Datasheet, PDF (11/85 Pages) Silicon Laboratories – Operation from backup battery when main power drains out

3.3.2 Environmental
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Table 3.3. Environmental
Symbol
V_ESDHBM
V_ESDCDM
Parameter
Condition
ESD (Human Body T_AMB=25°C
Model HBM)
ESD (Charged De- T_AMB=25°C
vice Model, CDM)
Min
Typ
Max
Unit
2500 V
500 V
Latch-up sensitivity passed: ±100 mA/1.5 × V_SUPPLY(max) according to JEDEC JESD 78 method Class
II, 85°C.
3.4 Current Consumption
Table 3.4. Current Consumption
Symbol
I_EM0
Parameter
Condition
Min
48 MHz HFXO, all peripheral
clocks disabled, V_DD= 3.0 V,
T_AMB=25°C
48 MHz HFXO, all peripheral
clocks disabled, V_DD= 3.0 V,
T_AMB=85°C
28 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=25°C
28 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=85°C
21 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=25°C
EM0 current. No
prescaling. Running
prime number cal-
culation code from
Flash. (Production
test condition = 14
MHz)
21 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=85°C
14 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=25°C
14 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=85°C
11 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=25°C
11 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=85°C
6.6 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=25°C
6.6 MHz HFRCO, all peripher-
al clocks disabled, V_DD= 3.0 V,
T_AMB=85°C
Typ
Max
Unit
225
236 µA/
MHz
225
µA/
MHz
226
238 µA/
MHz
227
µA/
MHz
228
240 µA/
MHz
229
µA/
MHz
230
243 µA/
MHz
231
µA/
MHz
232
245 µA/
MHz
233
µA/
MHz
238
250 µA/
MHz
238
µA/
MHz
2014-06-13 - EFM32WG995FXX - d0204_Rev1.40
11
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