S-809XXC Datasheet, PDF (9/36 Pages) Seiko Instruments Inc – ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
Rev.3.3_00
S-809xxC Series
2. CMOS Output Products
Table 8
(Ta=25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage^*1
−V_DET
—
−V_DET(S) −V_DET(S) −V_DET(S)
×0.98
×1.02
V
1
Hysteresis width
V_HYS
S-80913 to 14
−V_DET
×0.03
−V_DET
×0.05
−V_DET
×0.08
S-80915 to 60
−V_DET
×0.03
−V_DET
×0.05
−V_DET
×0.07
Current consumption
Operating voltage
Output current
I_SS
V_DD=2.0 V
S-80913 to 14 —
1.0
2.5 μA
2
V_DD=3.5 V
S-80915 to 26 —
1.1
2.8
V_DD=4.5 V
S-80927 to 39 —
1.2
3.0
V_DD=6.0 V
S-80940 to 54 —
1.3
3.3
V_DD=7.5 V
S-80955 to 60 —
1.4
3.5
V_DD
—
0.7
—
10.0 V
1
I_OUT
Output transistor, V_DD=0.95 V
Nch, V_DS=0.5 V S-80913 to 14
0.23
0.64
— mA
3
V_DD=1.2 V
S-80915 to 60
0.59
1.36
—
V_DD=2.4 V
S-80927 to 60
2.88
4.98
—
Output transistor, V_DD=4.8 V
Pch, V_DS=0.5 V S-80913 to 39
1.43
2.39
—
5
V_DD=6.0 V
S-80940 to 54
1.68
2.78
—
V_DD=8.4 V
S-80955 to 60
2.08
3.42
—
Delay time
t_D
C_D=4.7 nF
V_DD=2.0 V
S-80913 to 14
2.7
3.6
4.5 ms
4
V_DD=3.5 V
S-80915 to 26
18
24
30
V_DD=4.5 V
S-80927 to 39
V_DD=6.0 V
S-80940 to 54
V_DD=7.5 V
S-80955 to 60
Detection voltage
Δ − VDET
temperature coefficient ^*2 ΔTa • −VDET
Ta=−40°C to +85°C
—
±100
±350
ppm/
°C
1
*1. −V_DET: Actual detection voltage, −V_DET(S): Specified detection voltage (The center value of detection voltage range in
Table 2.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET _{[mV/°C]*1 = −VDET (Typ.) [V]*2 ×} Δ − VDET _{[ppm/°C]*3 ÷ 1000}
ΔTa
ΔTa • −VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
9