S-8233A Datasheet, PDF (7/30 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK

Rev.3.2_10
BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK
S-8233A Series
Electrical Characteristics
Table 6 (1 / 2)
(Ta = 25 °C unless otherwise specified)
Measure- Measure-
Item
Symbol
Condition
Min. Typ. Max. Unit ment ment
condition circuit
Detection voltage
Over charge detection voltage1
VCU1
4.10 to 4.35 Adjustment VCU1−0.05 VCU1 VCU1+0.05 V
1
1
Over charge release voltage1
VCD1
3.85 to 4.35 Adjustment VCD1−0.10 VCD1 VCD1+0.10 V
1
1
Over discharge detection voltage1
VDD1
2.00 to 2.70 Adjustment VDD1−0.08 VDD1 VDD1+0.08 V
1
1
Over discharge release voltage1
VDU1
2.00 to 3.70 Adjustment VDU1−0.10 VDU1 VDU1+0.10 V
1
1
Over charge detection voltage 2
VCU2
4.10 to 4.35 Adjustment VCU2−0.05 VCU2 VCU2+0.05 V
2
1
Over charge release voltage 2
VCD2
3.85 to 4.35 Adjustment VCD2−0.10 VCD2 VCD2+0.10 V
2
1
Over discharge detection voltage 2
VDD2
2.00 to 2.70 Adjustment VDD2−0.08 VDD2 VDD2+0.08 V
2
1
Over discharge release voltage 2
VDU2
2.00 to 3.70 Adjustment VDU2−0.10 VDU2 VDU2+0.10 V
2
1
Over charge detection voltage3
VCU3
4.10 to 4.35 Adjustment VCU3−0.05 VCU3 VCU3+0.05 V
3
1
Over charge release voltage3
VCD3
3.85 to 4.35 Adjustment VCD3−0.10 VCD3 VCD3+0.10 V
3
1
Over discharge detection voltage3
VDD3
2.00 to 2.70 Adjustment VDD3−0.08 VDD3 VDD3+0.08 V
3
1
Over discharge release voltage3
VDU3
2.00 to 3.70 Adjustment VDU3−0.10 VDU3 VDU3+0.10 V
3
1
Over current detection voltage1^*1
VIOV1
0.15 to 0.50V Adjustment VIOV1 x 0.9 VIOV1 VIOV1 x 1.1 V
4
2
Over current detection voltage 2
VIOV2
V_CC Reference
0.54 0.6 0.66
V
4
2
Over current detection voltage3
Voltage temperature factor 1^*2
Voltage temperature factor 2^*3
VIOV3
TCOE1
TCOE2
V_SS Reference
Ta=-20 to 70°C
Ta=-20 to 70°C
1.0
2.0 3.0
V
4
2
−1.0
0
1.0 mV/°C
−
−
−0.5
0
0.5 mV/°C
−
−
Delay time
Over charge detection delay time1
tCU1
C_CCT=0.47 µF
0.5
1.0 1.5
s
9
6
Over charge detection delay time 2
tCU2
C_CCT=0.47 µF
0.5
1.0 1.5
s
10
6
Over charge detection delay time3
tCU3
C_CCT=0.47 µF
0.5
1.0 1.5
s
11
6
Over discharge detection delay time1 tDD1
C_CDT=0.1 µF
20
40
60
ms
9
6
Over discharge detection delay time 2 tDD2
C_CDT=0.1 µF
20
40
60
ms
10
6
Over discharge detection delay time3 tDD3
C_CDT=0.1 µF
20
40
60
ms
11
6
Over current detection delay time1
tIOV1
Over current detection delay time 2
tIOV2
C_COVT=0.1 µF
−
10
20
30
ms
12
7
2
4
8
ms
12
7
Over current detection delay time3
tIOV3 FET gate capacitor =2000 pF 100
300 550
µs
12
7
Operating voltage
Operating voltage between VCC and
VSS^*4
VDSOP
−
2.0
−
24
V
−
−
Current consumption
Current consumption (during normal
operation)
IOPE
V1=V2=V3=3.5 V
−
20
50
µA
5
3
Current consumption for cell 2
ICELL2
V1=V2=V3=3.5 V
−300
0
300
nA
5
3
Current consumption for cell 3
ICELL3
V1=V2=V3=3.5 V
−300
0
300
nA
5
3
Current consumption at power down IPDN
V1=V2=V3=1.5 V
−
−
0.1
µA
5
3
Internal resistance
Resistance between
VCC and VMP
RVCM
V1=V2=V3=3.5 V
0.40 0.90 1.40 MΩ
6
3
V1=V2=V3=3.5 V ^*5
0.20 0.50 0.80 MΩ
6
3
Resistance between
VSS and VMP
RVSM
V1=V2=V3=1.5 V
0.40 0.90 1.40 MΩ
6
3
V1=V2=V3=1.5 V ^*5
0.20 0.50 0.80 MΩ
6
3
Input voltage
CTL"H" Input voltage
CTL"L" Input voltage
VCTL(H)
−
VCCx0.8 −
−
V
−
−
VCTL(L)
−
−
− VCCx0.2 V
−
−
Seiko Instruments Inc.
7