S-82A1AAB-I6T1U Datasheet, PDF (24/44 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC FOR 1-CELL PACK

BATTERY PROTECTION IC FOR 1-CELL PACK
S-82A1A Series
 Battery Protection IC Connection Example
Rev.2.0_00
EB+
R1
VDD
Battery C1
VSS
S-82A1A Series
VINI DO
CO
VM
R2
R3
FET1 FET2
EB−
Figure 14
Table 12 Constants for External Components
Symbol
Part
Purpose
Min.
Typ.
Max.
Remark
FET1
N-channel
MOS FET
Discharge control
−
−
−
Threshold voltage ≤ Overdischarge
detection voltage^*1
FET2
N-channel
MOS FET
Charge control
−
−
−
Threshold voltage ≤ Overdischarge
detection voltage^*1
R1
Resistor
ESD protection,
For power fluctuation
270 Ω
330 Ω
1 kΩ
Caution should be exercised when setting
VDIOV1 ≤ 30 mV, VCIOV ≥ −30 mV.^*2
C1
Capacitor For power fluctuation
0.068 μF 0.1 μF
1.0 μF
Caution should be exercised when setting
VDIOV1 ≤ 30 mV, VCIOV ≥ −30 mV.^*2
ESD protection,
R2
Resistor Protection for reverse
300 Ω 470 Ω 1.5 kΩ
−
connection of a charger
R3
Resistor Overcurrent detection
−
5 mΩ
−
−
*1. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be
stopped before overdischarge is detected.
*2. When setting V_DIOV1 ≤ 30 mV, V_CIOV ≥ −30 mV for power fluctuation protection, the condition of R1 × C1 ≥ 100 μF • Ω should
be met.
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above example
of connection. In addition, the example of connection shown above and the constant do not guarantee
proper operation. Perform thorough evaluation using the actual application to set the constant.
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