PA2423MB Datasheet, PDF (3/10 Pages) SiGe Semiconductor, Inc. – 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Absolute Maximum Ratings
Symbol
V_CC
V_CTL
V_RAMP
IN
T_A
T_STG
T_j
Parameter
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
-40
-40
Max.
+3.6
V_CC
V_CC
+8
+85
+150
+150
Unit
V
V
V
dBm
°C
°C
°C
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω ,unless otherwise noted.
Symbol
VCC
ICC
∆ICC_temp
VCTL
ICTL
VRAMP
I_stby
Note
Parameter
Supply Voltage
1
Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V
3
Supply Current variation over temperature from T_A = 25°C
(-40°C <TA <+85°C)
PA Output Power Control Voltage Range
1
Current sourced by VCTL Pin
3
Logic High Voltage
3
Logic Low Voltage
1
Leakage Current when Vramp = 0V, Vctl = high
Min. Typ. Max. Unit
3
3.3 3.6
V
125 150 mA
25
%
0
VCC
V
200 250 µA
2.0
V
0.8
V
0.5 10 µA
DOC# 05PDS001 Rev 9
07/26/2001
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