PA2423MB Datasheet, PDF (1/10 Pages) SiGe Semiconductor, Inc. – 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Bluetooth^tm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
Ordering Information
Type
Package
Shipping
Method
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV Evaluation kit
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for class 1 Bluetooth^tm 2.4 GHz radio
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency – making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetooth^tm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetooth^tm
specification 1.1.
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423MB – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Functional Block Diagram
IN
Stage 1
GND
V_CTL
Bias Generator
Interstage
Match
V_CC1
V_CC0 V_RAMP
Ramp
Circuitry
Stage 2
OUT/ V_CC2
GND
DOC# 05PDS001 Rev 9
07/26/2001
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