TLE4207 Datasheet, PDF (8/14 Pages) Siemens Semiconductor Group – 1-A Dual-HBD (Dual-Half-Bridge Driver)

TLE 4207
Electrical Characteristics (cont’d)
8 V < V_S < 18 V; INH = High; I_OUT1-2 = 0 A; – 40 °C < T_j < 150 °C;
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Outputs OUT1-2
Saturation Voltages
Source (upper)
I_OUT = – 0.2 A
Source (upper)
I_OUT = – 0.4 A
Sink (upper)
I_OUT = – 0.8 A
Sink (lower)
I_OUT = 0.2 A
Sink (lower)
I_OUT = 0.4 A
Sink (lower)
I_OUT = 0.8 A
V_{SAT U} –
V_{SAT U} –
V_{SAT U} –
V_{SAT L} –
V_{SAT L} –
V_{SAT L} –
0.85 1.15 V
0.90 1.20 V
1.10 1.50 V
0.15 0.23 V
0.25 0.40 V
0.45 0.75 V
T_j = 25 °C
T_j = 25 °C
T_j = 25 °C
T_j = 25 °C
T_j = 25 °C
T_j = 25 °C
Total Drop I_OUT = 0.2 A V_SAT
–
Total Drop I_OUT = 0.4 A V_SAT
–
Total Drop I_OUT = 0.8 A V_SAT
–
Clamp Diodes
Forward voltage; upper
Upper leakage current
Forward voltage; lower
Notes see page 10.
V_FU
–
I_LKU
–
V_FL
–
1 1.4 V
1.2 1.7 V
1.6 2.5 V
V_SAT = V_{SAT U} + V_{SAT L}
V_SAT = V_{SAT U} + V_{SAT L}
V_SAT = V_{SAT U} + V_{SAT L}
1 1.5
–5
0.9 1.4
V I_F = 0.4 A
mA I_F = 0.4 A¹⁾
V I_F = 0.4 A
Semiconductor Group
8
1998-02-01