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OBTS917 Datasheet, PDF (8/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch
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BTS 917
Typ. current limit versus RCC
ID(lim) = f(RCC); Tj=25°C
Parameter: VIN
50
10V
A
ID
30
20
5V
10
0
10
0
10 1
10 2
Transient thermal impedance
ZthJC = f(tP)
Parameter: D=tP/T
10 1
Ω
10 3
RCC
Typ. current sense characteristics
VCC = f(ID); VIN=10V
Parameter: RCC, Tj
0.45
V
47 Ohm
0.35
VCC
0.30
no Rcc
18 Ohm
125°C
10 Ohm
0.25
25°C
0.20
0.15
0.10
0.05
0.00
0 4 8 12 16 20 24 A 30
ID
K/W
RthJC
10 0
D=0.5
0.2
0.1
10 -1
0.05
0.02
0.01
0.005
0
10
-2
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
s
tP
10 2
Semiconductor Group
Page 8
14.07.1998
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