OBTS917 Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – Smart Lowside Power Switch

Maximum allowable power dissipation
P_tot = f(T_c)
BTS 917
50
W
40
P_tot
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 150
150
On-state resistance
R_ON = f(T_j); I_D= 3.5A; V_IN=5V
BTS 917
On-state resistance
R_ON = f(T_j); I_D=3.5A; V_IN=10V
200
Ω
R_DS(o¹_n⁵₎⁰
125
100
max.
typ.
75
50
25
0
-50 -25 0 25 50 75 100 °C 150
T_j
Typ. input threshold voltage
V_IN(th) = f(T_j); I_D=0,7A; V_DS=12V
250
2.0
Ω
V
200
R_DS(on)
175
150
max.
1.6
V_IN(th)
1.4
1.2
125
1.0
typ.
100
0.8
75
0.6
50
0.4
25
0.2
0
-50 -25 0 25 50 75 100 °C 150
T_j
Semiconductor Group
Page 6
0.0
-50 -25 0 25 50 75 100 °C 150
T_j
14.07.1998