HYS64V1000GS-10 Datasheet, PDF (8/9 Pages) Siemens Semiconductor Group – 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module

HYS64(72)V1000GS-10/-12/-15
1M x 64/72 SDRAM-Module
Serial Presence Detect
A serial presence detect storage device - E²PROM 34C02 - is assembled onto the module.
Information about the module configuration, speed, etc. is written into the E²PROM device during
module production using a serial presence detect protocol ( I2C synchronous 2-wire bus)
Byte#
Description
SPD
Entry
Value
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex
0 Number of SPD bytes
128
1 0 0 0 0 0 0 0 80
1 Total bytes in Serial PD
256
0 0 0 0 1 0 0 0 08
2 Memory Type
SDRAM 0 0 0 0 0 1 0 0 04
3 Number of Row Addresses
12
0 0 0 0 1 1 0 0 0C
4 Number of Column Addresses
8
0 0 0 0 1 0 0 0 08
5 Number of DIMM Banks
1
0 0 0 0 0 0 0 1 01
6 Module Data Width
64
0 1 0 0 0 0 0 0 40
72
0 1 0 0 1 0 0 0 48
7 Module Data Width (cont’d)
0
0 0 0 0 0 0 0 0 00
8 Module Interface Levels
LVTTL 0 0 0 0 0 0 0 1 01
9 SDRAM Cycle Time
10 ns 1 0 1 0 0 0 0 0 A0
12 ns 1 1 0 0 0 0 0 0 C0
15 ns 1 1 1 1 0 0 0 0 F0
10 SDRAM Access time from
9 ns
1 0 0 1 0 0 0 0 90
Clock
11 ns 1 0 1 1 0 0 0 0 B0
13 ns 1 1 0 1 0 0 0 0 D0
11 Dimm Config (Error Det/Corr.) none 0 0 0 0 0 0 0 0 00
ECC
000
000
1 0 02
12 Refresh Rate/Type
norrmal 0 0 0 0 0 0 0 0 00
15.6µs
13 SDRAM Module Attributes
*)
14 SDRAM Device Attributes
*)
15 SDRAM Device Attributes
*)
16 Burst Length supported
10001111
17 Number of SDRAM banks
2
0 0 0 0 0 0 0 0 01
18 Supported CAS Latencies
01111111
19 CS Latencies
*)
20 WE Latencies
*)
note : *) not decided yet
Semiconductor Group
8