HYS64V1000GS-10 Datasheet, PDF (7/9 Pages) Siemens Semiconductor Group – 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module

HYS64(72)V1000GS-10/-12/-15
1M x 64/72 SDRAM-Module
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A11)
Input capacitance
(RAS, CAS, WE, CS0, CS2,CLK0, CKE, DQMB0-7)
Output capacitance (DQ0-DQ63,CB0-CB7)
Input Capacitance (SCL,SA0-2)
Input/Output Capacitance
AC characteristics and waveforms
Symbol
C_I1
C_I2
Limit Values
min.
max.
–
55
–
25
C_IO
–
11
C_sc
–
8
C_sd
–
10
Unit
pF
pF
pF
pF
pF
For AC characteristics, detailed function description and waveforms see the SDRAM datasheet
HYB39S164/8/160T.
Semiconductor Group
7