HYM364020S Datasheet, PDF (8/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit Dynamic RAM Module

HYM 364020S/GS-60
4M × 36-Bit
AC Characteristics (contd’ ) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-60
min.
max.
Early Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
t_WCH
10
–
t_WP
10
–
t_WCS
0
–
t_RWL
15
–
t_CWL
15
–
t_DS
0
–
t_DH
10
–
ns
ns
ns 13
ns
ns
ns 14
ns 14
t_PC
40
t_CP
10
t_CPA
–
t_RAS
60
t_RHCP 35
–
ns
–
ns
35
ns 7
200k ns
–
ns
t_CSR
10
–
ns
t_CHR
10
–
ns
t_RPC
5
–
ns
t_WRP
10
–
ns
t_WRH
10
–
ns
Semiconductor Group
8