HYB514171BJ-50- Datasheet, PDF (8/23 Pages) Siemens Semiconductor Group – 256k x 16-Bit Dynamic RAM

HYB 514171BJ-50/-60
256k × 16 DRAM
AC Characteristics (cont’d) ^{5, 6}
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
CAS precharge time
Access time from CAS precharge
RAS pulse width
RAS hold time from CAS precharge
t_CP
10 –
10 –
ns
t_CPA
–
30 –
35 ns ⁷
t_RASP
50 200k 60 200k ns
t_RHCP
30
–
35 –
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read/write cycle time
CAS precharge to WE delay time
t_PRWC
80
–
90 –
ns
t_CPWD
55
–
60 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold tim
RAS to CAS precharge time
Write to RAS precharge time
Write to RAS hold time
t_CSR
5
–
5
–
ns
t_CHR
10 –
10 –
ns
t_RPC
0
–
0
–
ns
t_WRP
10 –
10 –
ns
t_WRH
10 –
10 –
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
25 –
30 –
ns
Semiconductor Group
8
1998-10-01