HYB514171BJ-50- Datasheet, PDF (5/23 Pages) Siemens Semiconductor Group – 256k x 16-Bit Dynamic RAM

HYB 514171BJ-50/-60
256k × 16 DRAM
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ......................................................................................................... – 1 to 6 V
Power supply voltage........................................................................................................ – 1 to 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Symbol
Limit Values Unit Notes
min.
max.
Input high voltage
V_IH
Input low voltage
V_IL
TTL Output high voltage (I_OUT = – 5.0 mA)
V_OH
TTL Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current, any input
I_I(L)
(0 V < V_IN < V_CC + 0.3 V, all other inputs = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V < V_OUT < V_CC )
Average V_CC supply current
-50 version I_CC1
-60 version
2.4
– 1.0
2.4
–
– 10
– 10
–
V_CC + 0.5 V
1
0.8
V
1
–
V
1
0.4
V
1
10
µA ¹
10
µA ¹
190
mA ^{2, 3, 4}
170
Standby V_CC supply current
(RAS = LCAS = UCAS = WE = V_IH)
I_CC2
–
Average V_CC supply current during
–
RAS-only refresh cycles
-50 version I_CC3
-60 version
2
mA
2, 4
190
mA
170
Average V_CC supply current during
–
fast page mode operation
-50 version I_CC4
-60 version
2, 3, 4
160
mA
150
Standby V_CC supply current
I_CC5
–
(RAS = LCAS = UCAS = WE = V_CC – 0.2 V)
Average V_CC supply current during
–
CAS-before-RAS refresh mode
-50 version I_CC6
-60 version
1
mA ¹
2, 4
190
mA
170
Semiconductor Group
5
1998-10-01