BUZ305 Datasheet, PDF (8/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 305
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 7.5 A, V_DD = 50 V
R_GS = 25 Ω, L = 27.7 mH
900
mJ
E_{AS 700}
600
500
400
300
200
100
0
20 40 60 80 100 120 °C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Typ. gate charge
V_GS = ƒ(Q_Gate)
parameter: I_{D puls} = 11 A
16
V
V_GS
12
10
0,2
V
DS
max
8
0,8
V
DS
max
6
4
2
0
0
40 80 120 160 200 nC 260
Q_Gate
960
V
920
V_(BR)DSS
900
880
860
840
820
800
780
760
740
720
-60
-20
20
60
100 °C 160
T_j
Semiconductor Group
8
01/97