BUZ305 Datasheet, PDF (7/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 305
Drain-source on-resistance
R_{DS (on)} = ƒ(T_j)
parameter: I_D = 5 A, V_GS = 10 V
5.0
Ω
R_{DS (on)} ^4.0
3.5
3.0
2.5
2.0
98%
1.5
typ
1.0
0.5
0.0
-60
-20
20
60
100 °C 160
T_j
Gate threshold voltage
V_{GS (th)} = ƒ(T_j)
parameter: V_GS = V_DS, I_D = 1 mA
4.6
V
4.0
V_{GS(th) 3.6}
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
98%
typ
2%
20
60
100 °C 160
T_j
Typ. capacitances
C = f (V_DS)
parameter:V_GS = 0V, f = 1MHz
10 ⁵
Forward characteristics of reverse diode
I_F = ƒ(V_SD)
parameter: T_j, t_p = 80 µs
10 ²
pF
C
10 ⁴
A
I_F
10 ¹
C_iss
10 ³
10 ²
0
C_oss
C_rss
5 10 15 20 25 30 V 40
V_DS
Semiconductor Group
7
10 ⁰
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
10 ^-1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V_SD
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