BUZ271 Datasheet, PDF (8/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ 271
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = -22 A, V_DD = -25 V
R_GS = 25 Ω, L = 413 µH
220
mJ
E_AS ¹⁸⁰
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
-60
V
V_(BR)DSS-57
-56
-55
-54
-53
-52
-51
-50
-49
-48
-47
-46
-45
-60
-20
20
60
100 °C 160
T_j
Semiconductor Group
8
07/96