BUZ271 Datasheet, PDF (3/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

BUZ 271
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Dynamic Characteristics
Transconductance
g_fs
V_DS≥ 2 _* I_{D *} R_DS(on)max, I_D = -14 A
1.5
Input capacitance
C_iss
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
-
Output capacitance
C_oss
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
-
Reverse transfer capacitance
C_rss
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
-
Turn-on delay time
t_d(on)
V_DD = -30 V, V_GS = -10 V, I_D = -2.95 A
R_GS = 50 Ω
-
Rise time
t_r
V_DD = -30 V, V_GS = -10 V, I_D = -2.95 A
R_GS = 50 Ω
-
Turn-off delay time
t_d(off)
V_DD = -30 V, V_GS = -10 V, I_D = -2.95 A
R_GS = 50 Ω
-
Fall time
t_f
V_DD = -30 V, V_GS = -10 V, I_D = -2.95 A
R_GS = 50 Ω
-
4
-
2000 2700
650
975
250
375
30
45
120
180
130
175
140
190
Unit
S
pF
ns
Semiconductor Group
3
07/96