BUZ103SL-4 Datasheet, PDF (8/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

Preliminary data
BUZ 103SL-4
Avalanche energy E_AS = ƒ(T_j)
parameter: I_D = 4.8 A, V_DD = 25 V
R_GS = 25 Ω, L = 12 mH
150
mJ
130
E_AS 120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
T_j
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Typ. gate charge
V_GS = ƒ(Q_Gate)
parameter: I_{D puls} = 5 A
16
V
V_GS
12
10
8
6
0,2 V_{DS max}
0,8 V_{DS max}
4
2
0
0 5 10 15 20 25 30 35 40 nC 50
Q_Gate
65
V
V_(BR)DSS
61
59
57
55
53
51
49
-60 -20
20
60 100 °C 180
T_j
Semiconductor Group
8
05/Sep/1997