BUZ103SL-4 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

SIPMOS ^® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 103SL-4
Type
V_DS
BUZ 103SL-4 55 V
I_D
4.8 A
R_DS(on)
0.055 Ω
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
T_A = 25 °C
Pulsed drain current one channel active
T_A = 25 °C
Avalanche energy, single pulse
I_D = 4.8 A, V_DD = 25 V, R_GS = 25 Ω
L = 12 mH, T_j = 25 °C
Reverse diode dv/dt
I_S = 4.8 A, V_DS = 40 V, di_F/dt = 200 A/µs
T_jmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
T_A = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
I_D
I_Dpuls
E_AS
dv/dt
V_GS
P_tot
T_j
T_stg
Values
Unit
A
4.8
19.2
mJ
140
kV/µs
6
± 14
V
W
2.4
-55 ... + 175 °C
-55 ... + 175
55 / 175 / 56
Semiconductor Group
1
05/Sep/1997