BUZ11S2 Datasheet, PDF (7/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 11 S2
Not for new design
Drain-source on-resistance
R_{DS (on)} = ƒ(T_j)
parameter: I_D = 19 A, V_GS = 10 V
0.13
Ω
0.11
R_{DS (on)0.10}
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
-60
-20
98%
typ
20
60
100 °C 160
T_j
Gate threshold voltage
V_{GS (th)} = ƒ(T_j)
parameter: V_GS = V_DS, I_D = 1 mA
4.6
V
4.0
V_{GS(th) 3.6}
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
T_j
Typ. capacitances
C = f (V_DS)
parameter:V_GS = 0V, f = 1MHz
10 ¹
Forward characteristics of reverse diode
I_F = ƒ(V_SD)
parameter: T_j, t_p = 80 µs
10 ³
nF
C
10 ⁰
10 ^-1
C_iss
C_oss
C_rss
10 ^-2
0
5 10 15 20 25 30 V 40
V_DS
Semiconductor Group
7
A
I_F
10 ²
10 ¹
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
10 ⁰
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V_SD
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