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BUZ11S2 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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BUZ 11 S2
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 60 V, VGS = 0 V, Tj = 25 °C
VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 19 A
Symbol
min.
Values
typ.
max.
V(BR)DSS
60
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
-
-
3
4
0.1
1
10
100
10
100
0.03
0.04
Unit
V
µA
nA
Ω
Semiconductor Group
2
07/96
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