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BFT93 Datasheet, PDF (7/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor
BFT 93
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
12
dB IC=30mA
10
G
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
Power Gain Gma, Gms = f(f)
0.9GHz
0.9GHz
1.8GHz
1.8GHz
V
12
VCE
VCE = Parameter
30 IC=30mA
dB
G
22
18
14
10
6
10V
2
2V
0.7V 1V
-2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50Ω)
VCE = Parameter, f = 900MHz
28
dBm
IP3 24
22
8V
3V
2V
20
18
1V
16
14
12
10
0 5 10 15 20 25 30 35 40 mA 50
IC
Power Gain |S21|2= f(f)
VCE = Parameter
28
dB IC=30mA
24
S21 22
20
18
16
14
12
10
8
6
4
2
0.7V
10V
0
1V
2V
-2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-12-1996