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| BFT93 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor | |||
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BFT 93
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
12
-
-
Collector-base cutoff current
ICBO
nA
VCB = 5 V, IE = 0
-
-
50
Emitter-base cutoff current
IEBO
µA
VEB = 2 V, IC = 0
-
-
10
DC current gain
hFE
-
IC = 30 mA, VCE = 8 V
20
60
-
Semiconductor Group
2
Dec-12-1996
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