BFT92W Datasheet, PDF (7/7 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

BFT 92W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=15mA
dB
G
12
0.9GHz
0.9GHz
10
1.8GHz
8
1.8GHz
6
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
35
I_C=15mA
dB
G
25
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
35
dBm
IP₃
25
20
15
8V
3V
2V
1V
10
5
0
0
5
10
15
20 mA 30
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=15mA
dB
S₂₁
20
20
15
15
10
10
10V
5
2V
1V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
5
10V
0
2V
1V
0.7V
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996