BFT92W Datasheet, PDF (6/7 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

BFT 92W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.8
pF
C_{cb 1.4}
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 2 4 6 8 10 12 14 16 V 20
V_R
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
16
dB
G
14
13
12
11
10
9
8
7
6
5
0
10V
5V
3V
2V
1V
0.7V
5
10
15
20
mA 30
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
6.0
10V
GHz
f_T ^5.0
8V
4.5
5V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
20
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
3V
2V
1V
0.7V
mA 30
I_C
10.0
dB
G ^8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10V
5V
3V
2V
1V
0.7V
5
10
15
20 mA 30
I_C
Semiconductor Group
6
Dec-11-1996