BFR280W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

BFR 280W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=3mA
dB
G
14
12
0.9GHz
0.9GHz
1.8GHz
10
1.8GHz
8
6
4
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V_CE = Parameter
30
I_C=3mA
dB
G
20
V
12
V_CE
15
10
10V
1V
5
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
20
dBm
IP₃
12
8
4
8V
5V
3V
2V
1V
0
-4
-8
-12
0
2
4
6
Power Gain |S₂₁|²= f(f)
8 mA 11
I_C
V_CE = Parameter
20
I_C=3mA
dB
S₂₁ ¹⁶
14
12
10
8
6
10V
4
1V
0.7V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-11-1996