BFR280W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems

BFR 280W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.5
C_cb ^pF
0.3
0.2
0.1
0.0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 11
V_R
20
dB
G
16
10V
2V
Transition frequency f_T = f (I_C)
V_CE = Parameter
11
GHz
f_T
9
8
7
6
5
10V
8V
5V
3V
2V
4
1V
3
0.7V
2
1
0
0
2
4
6
8 mA 11
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
G
10
10V
3V
2V
14
8
1V
12
0.7V
6
10
4
1V
0.7V
8
6
0
2
4
6
8 mA 11
I_C
Semiconductor Group
6
2
0
0
2
4
6
8 mA 11
I_C
Dec-11-1996