BFR180 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR 180
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=1mA
dB
G
0.9GHz
12
1.8GHz
10
8
0.9GHz
6
1.8GHz
4
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
24
I_C=1mA
dB
G ²⁰
18
16
14
12
10
8
6
10V
1V
4
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
10
dBm
8V
5V
6
IP₃
4
2
3V
2V
0
-2
1V
-4
-6
-8
-10
-12
-14
-16
-18
0.0 1.0 2.0 3.0 4.0 mA 6.0
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
10
I_C=1mA
dB
S₂₁
8
7
6
5
4
10V
3
1V
2
0.7V
1
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Feb-04-1997