BFR180 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR 180
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.45
pF
C_{cb 0.35}
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 11
V_R
18
dB
G
14
10V
3V
2V
12
1V
10
0.7V
8
6
Transition frequency f_T = f (I_C)
V_CE = Parameter
8
GHz
f_T
6
5
10V
8V
5V
3V
4
2V
3
1V
0.7V
2
1
0
0.0
1.0
2.0
3.0
4.0 mA 5.5
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
G
10
8
10V
5V
3V
2V
6
1V
4
0.7V
4
0
1
2
3
4
mA
6
I_C
2
0
1
2
3
4
mA
6
I_C
Semiconductor Group
6
Feb-04-1997