BFQ81 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

BFQ 81
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=15mA
dB
G
14
12
10
8
6
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
0.9GHz
1.8GHz
1.8GHz
V
12
V_CE
V_CE = Parameter
35
I_C=15mA
dB
G
25
20
15
10
10V
2V
5
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
28
dBm
8V
IP₃ ²⁴
22
20
18
5V
3V
2V
16
14
12
1V
10
8
6
0 4 8 12 16 20 24 28 mA 34
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
28
dB ^I_C^=15mA
24
G
22
20
18
16
14
12
10
8
6
4
10V
2V
2
1V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-12-1996