BFQ81 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

BFQ 81
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.9
pF
C_{cb 0.7}
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
18
dB
G
14
12
10V
5V
3V
2V
10
8
1V
6
4
0.7V
2
0
0
5 10 15 20 25 mA 35
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
7
GHz
f_T
5V
5
2V
4
3
1V
2
0.7V
1
0
0
5 10 15 20 25 mA 35
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
dB
G
8
10V
5V
3V
2V
6
4
1V
2
0
0.7V
-2
0
5 10 15 20 25 mA 35
I_C
Semiconductor Group
6
Dec-12-1996