BFP280W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFP 280W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
19
dB ^IC=3mA
17
G
16
15
14
13
12
11
10
9
8
7
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
1.8GHz
0.9GHz
1.8GHz
V
12
V_CE
V_CE = Parameter
28
I_C=3mA
dB
G
24
22
20
18
16
14
12
10
10V
2V
8
1V
0.7V
6
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
18
dBm
14
IP₃ 12
10
8
6
4
1V
2
0
-2
-4
-6
-8
-10
-12
0
2
4
6
Power Gain |S₂₁|²= f(f)
8V
5V
3V
2V
8 mA 11
I_C
V_CE = Parameter
20
I_C=3mA
dB
S_{21 16}
14
12
10
8
10V
6
2V
1V
4
0.7V
2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-12-1996