BFP280W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFP 280W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.40
pF
C_cb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
22
dB
G
18
10V
2V
16
1V
14
0.7V
12
10
8
0
2
4
6
8 mA 11
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
10V
8V
5V
3V
2V
4
1V
3
0.7V
2
1
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 11
I_C
17
dB
15
G
14
10V
3V
13
2V
12
11
10
9
1V
8
7
0.7V
6
5
0
2
4
6
8 mA 11
I_C
Semiconductor Group
6
Dec-12-1996