BFP180W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

BFP 180W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=1mA
dB
G
14
12
10
8
6
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
1.8GHz
0.9GHz
1.8GHz
V
12
V_CE
V_CE = Parameter
28
I_C=1mA
dB
24
G
22
20
18
16
14
12
10
10V
8
1V
6
0.7V
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
8
dBm
8V
5V
4
IP₃
2
3V
0
2V
-2
-4
1V
-6
-8
-10
-12
-14
-16
-18
0.0 1.0 2.0 3.0 4.0 mA 6.0
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
12
I_C=1mA
dB
G
8
6
10V
4
2V
1V
0.7V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Dec-12-1996