BFP180W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

BFP 180W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.5
C_cb ^pF
0.3
0.2
0.1
0.0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V
12
V_R
20
dB
G ¹⁶
14
12
10
10V
2V
1V
0.7V
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
4
10V
8V
5V
3V
2V
3
1V
0.7V
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
18
dB
G
14
10V
5V
12
3V
10
2V
8
1V
6
0.7V
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0
I_C
Semiconductor Group
6
Dec-12-1996