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HYM364035S Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit EDO-DRAM Module | |||
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HYM 364035S/GS-60
4M Ã 36-Bit EDO-Module
DC Characteristics1) (contâd)
Parameter
Average VCC supply current
during hyper page mode (EDO)
(RAS = VIL, CAS, address cycling,
tPC = tPC min)
-60 ns version
Standby VCC supply current
(RAS = CAS = VCC â 0.2 V)
Average VCC supply current
during CAS-before-RAS refresh mode
(RAS, CAS cycling, tRC = tRC min)
-60 ns version
Symbol
ICC4
Limit Values
min.
max.
Unit Test
Condition
â
ICC5
â
ICC6
â
660
12
mA
2),3),4)
mA 1)
1320
mA 2),4)
Capacitance
TA = 0 to 70 ËC, VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0 - CAS3)
Input capacitance (WE)
I/O capacitance(DQ0-DQ35)
Symbol
CI1
CI2
CI3
CI4
CIO1
Limit Values
min.
max.
â
90
â
45
â
40
â
90
â
20
Unit
pF
pF
pF
pF
pF
Semiconductor Group
6
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