HYM364035S Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit EDO-DRAM Module

4M × 36-Bit EDO-DRAM Module
HYM 364035S/GS-60
Advanced Information
• 4 194 304 words by 36-Bit organization
• Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
• Hyper page mode (EDO) capability
25 ns cycle time
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 7260 mW active
CMOS – 66 mW standby
TTL – 132 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 12 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height
• Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (HYM 364035S-60)
• Gold contact pads (HYM 364035GS-60)
Semiconductor Group
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