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HYM361120 Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) | |||
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HYM 361120/40S/GS-60/-70
1M Ã 36-Bit
DC Characteristics (contâd) 1)
Parameter
Symbol
Average VCC supply current during fast
ICC4
page mode:
-60 version
-70 version
Limit Values
min.
max.
â
840
â
720
(RAS = VIL, CAS, address cycling
tPC = tPC min.)
Standby VCC supply current
(RAS = CAS = VCC â 0.2 V)
ICC5
â
Average VCC supply current during
ICC6
CAS-before-RAS refresh mode:
-60 version
â
-70 version
â
12
1240
1120
(RAS, CAS cycling, tRC = tRC min.)
Unit Test
Condition
2), 3)
mA
mA
mA â
1)
mA
mA
Capacitance
TA = 0 to 70 ËC; VCC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0-CAS3)
Input capacitance (WE)
I/O capacitance (DQ0-DQ7, DQ9-DQ16,
DQ18-DQ25, DQ27-DQ34)
I/O capacitance (DQ8, DQ17, DQ26, DQ35)
Symbol
CI1
CI2
CI3
CI4
CIO1
Limit Values
min.
max.
â
80
â
42
â
35
â
80
â
15
CIO2
â
20
Unit
pF
pF
pF
pF
pF
pF
Semiconductor Group
596
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