HYM361120 Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)

HYM 361120/40S/GS-60/-70
1M × 36-Bit
The HYM 361120/40S/GS-60/-70 is a 4 MByte DRAM module organized as 1 048 576 words by
36-bit in a 72-pin single-in-line package comprising four HYB 511000BJ 1M × 1 DRAMs and eight
HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with twelve
0.2 µF ceramic decoupling capacitors on a PC board.
The HYM 361120/40S/GS-60/-70 can also be used as a 2 097 152 words by 18-bits dynamic RAM
module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, …, DQ17 and
DQ35, respectively.
Each HYB 511000BJ and HYB 514400BJ is described in the data sheet and is fully electrically
tested and processed according to Siemens standard quality procedure prior to module assembly.
After assembly onto the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 361120/40S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0-A9
DQ0-DQ35
CAS0 - CAS3
RAS0, RAS2
WE
V_CC
V_SS
PD
N.C.
Function
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
Presence Detect Pins
PD0
PD1
PD2
PD3
-60
V_SS
V_SS
N.C.
N.C.
-70
V_SS
V_SS
V_SS
N.C.
Semiconductor Group
592