HYM328025S Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – 8M x 32-Bit EDO-DRAM Module

HYM328025S/GS-50/-60
8M × 32-Bit EDO-Module
DC Characteristics¹⁾ (contd’ )
Parameter
Average V_CC supply current
during hyper page mode (EDO)
(RAS = V_IL, CAS, address cycling,
t_PC = t_PC min)
-50 version
-60 version
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
Average V_CC supply current
during CAS-before-RAS refresh mode
(RAS, CAS cycling, t_RC = t_RC min)
-50 version
-60 version
Symbol
I_CC4
Limit Values
min.
max.
Unit Test
Condition
–
–
I_CC5
–
I_CC6
–
–
560
mA ^{2) 3) 4)}
440
mA
16
mA 1)
960
mA ^{2) 4)}
880
mA
Capacitance
T_A = 0 to 70 °C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10,WE)
Input capacitance (RAS0 - RAS3)
Input capacitance (CAS0 - CAS3)
I/O capacitance
(DQ0-DQ31)
Symbol
C_I1
C_I2
C_I3
C_IO
Limit Values
min.
max.
–
120
–
45
–
40
–
25
Unit
pF
pF
pF
pF
Semiconductor Group
6