HYM322005S Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322005S/GS-50/-60
2M × 32-Bit EDO-Module
DC Characteristics (contd’ )
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 V ± 10 %; t_T = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
4
Average V_CC supply current, during CAS-
I_CC6
before-RAS refresh mode: -50 ns version
–
400
-60 ns version
–
360
(RAS, CAS cycling: t_RC = t_RC min.)
Unit Test
Condition
mA ¹⁾
mA ^{2) 4)}
mA ^{2) 4)}
Capacitance
T_A = 0 to 70 °C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0-CAS3)
Input capacitance (WE)
I/O capacitance (DQ0-DQ31)
Symbol
C_I1
C_I2
C_I3
C_I4
C_IO1
Limit Values
min.
max.
–
35
–
20
–
20
–
35
–
25
Unit
pF
pF
pF
pF
pF
Semiconductor Group
6