HYM322005S Datasheet, PDF (5/10 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322005S/GS-50/-60
2M × 32-Bit EDO-Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 2.52 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 V ± 10 %; t_T = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
V_IH
Input low voltage
V_IL
Output high voltage (I_OUT = – 5 mA)
V_OH
Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current
I_I(L)
(0 V ≤ V_IH ≤ Vcc + 0.3V, all other pins = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V ≤ V_OUT ≤ Vcc + 0.3V)
Average V_CC supply current:
I_CC1
-50 ns version
-60 ns version
(RAS, CAS, address cycling: t_RC = t_RC min.)
Standby V_CC supply current
I_CC2
(RAS = CAS = V_IH)
Average V_CC supply current, during RAS-only I_CC3
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling, CAS = V_I,H, t_RC = t_RC min.)
Average V_CC supply current,during hyper page I_CC4
mode (EDO):
-50 ns version
-60 ns version
(RAS = V_IL, CAS, address cycling:
(t_HPC = t_HPC min.)
2.4
– 0.5
2.4
–
– 10
– 10
Vcc+0.5
0.8
–
0.4
10
10
–
400
–
360
–
8
–
400
–
360
–
180
–
150
Unit Test
Condition
V
1)
V
1)
V
1)
V
1)
µA ¹⁾
µA ¹⁾
mA ^{2) 3) 4)}
mA ^{2) 3) 4)}
mA –
mA ^{2) 4)}
mA ^{2) 4)}
mA ^{2) 3) 4)}
mA ^{2) 3) 4)}
Semiconductor Group
5