HYB5116405BJBT-50- Datasheet, PDF (6/28 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics( note : values in brackets for HYB 5117405 BJ/BT)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 V ± 10 %; t_T = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
V_IH
Input low voltage
V_IL
Output high voltage (I_OUT = – 5 mA)
V_OH
Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current
I_I(L)
(0 V ≤ V_IH ≤ Vcc + 0.3V, all other pins = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V ≤ V_OUT ≤ Vcc + 0.3V)
2.4
– 0.5
2.4
–
– 10
– 10
Vcc+0.5 V ¹⁾
0.8
V ¹⁾
–
V ¹⁾
0.4
V ¹⁾
10
µA ¹⁾
10
µA ¹⁾
Average V_CC supply current:
I_CC1
-50 ns version
–
-60 ns version
–
-70 ns version
–
(RAS, CAS, address cycling: t_RC = t_RC min.)
100(120) mA
90 (110) mA
80 (100) mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
Standby V_CC supply current (RAS = CAS = V_IH) I_CC2
–
2
mA –
Average V_CC supply current, during RAS-only I_CC3
refresh cycles:
-50 ns version
–
-60 ns version
–
-70 ns version
–
(RAS cycling, CAS = V_IH, t_RC = t_RC min.)
100(120) mA ^{2) 4)}
90 (110) mA ^{2) 4)}
80 (100) mA ^{2) 4)}
Semiconductor Group
6