BSS139 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

BSS 139
Gate threshold voltage V_GS(th) = f (T_j)
parameter: V_DS = 3 V, I_D = 1 mA, (spread)
Forward characteristics of reverse diode
I_F = f (V_SD)
parameter: t_p = 80 µs, T_j, (spread)
Drain current I_D = f (T_A)
parameter: V_GS ≥ 3 V
Drain-source breakdown voltage
V_{(BR) DSS} = b × V_(BR)DSS (25 ˚C)
Semiconductor Group
6