BSS139 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS^® Small-Signal Transistor
q V_DS 250 V
q I_D
0.04 A
q R_DS(on) 100 Ω
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in V_GS(th)
BSS 139
Type
Ordering
Code
Tape and Reel
Information
BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
BSS 139 Q67000-S221 E7941: 3000 pcs/reel;
V_GS(th) selected in groups:
(see page 491)
Pin Configuration Marking
123
G S D STs
Package
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, T_A = 25 ˚C
Pulsed drain current,
T_A = 25 ˚C
Max. power dissipation, T_A = 25 ˚C
Operating and storage temperature range
Symbol
V_DS
V_DGR
V_GS
V_gs
I_D
I_{D puls}
P_tot
T_j, T_stg
Values
250
250
± 14
± 20
0.04
0.12
0.36
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
chip-substrate – reverse side ¹⁾
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R_thJA
R_thJSR
–
–
≤ 350
≤ 285
E
55/150/56
K/W
–
1) _{For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.}
Semiconductor Group
1
10.94